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Электронный компонент: KDV804M

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TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL
CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
FEATURES
Low Series Resistance : rs=0.3(TYP.).
Small Package : SOT-23.
MAXIMUM RATING (Ta=25 )
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. ANODE 1
3. ANODE 2
2. CATHODE 1, 2
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
1
2
3
1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV804M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Grade
Type Name
Marking
Lot No.
K3
CLASSIFICATION OF CAPACITANCE RATIO GRADE
DIM
MILLIMETERS
1. ANODE 1
2. ANODE 2
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
50
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
42
-
47.5
pF
C
8V
V
R
=8V, f=1MHz
24
-
28.8
Capacitance Ratio
C
2V
/C
8V
1.65
-
1.8
Series Resistance
r
S
C=38pF, f=100MHz
-
0.3
0.4
GRADE
CAPACITANCE(C
2V
)
UNIT
A
42 43.5
pF
B
43 44.5
C
44 45.5
D
45 46.5
E
46 47.5
KDV804M/S
2/2
1998. 6. 15
Revision No : 1
C - V
R
REVERSE VOLTAGE V (V)
1
3
10
30
100
5
CAPACITANCE C (pF)
30
R
5
10
50
f=1MHz
Ta=25 C
Ta=25 C
f=50MHz
500
100
5
R
300
FIGURE OF MERIT Q
50
1k
30
10
3
1
REVERSE VOLTAGE V (V)
R
Q - V